Sensor Interfaces and Systems
Performance Optimized Sensor Interfaces and Systems
High performance analog and mixed signal blocks are key to enabling a sensor interface. StarIC’s extensive library of sensor interfaces integrate a number of IPs and sub-blocks developed over the years to produce a highly integrated performance optimized system. As different sensor applications require highly customized interfaces the IPs listed can be modified to meet your sensor requirements. Sub-blocks and/or architectures from different designs can be combined together to synthesize a solution with the desired functionality for your system. Additional IPs are available through an NDA. Contact us for more details.
STAR2000 - Capacitive touch panel controller IP for large screens
A touch panel controller IP block for projective capacitive touch screens (PCTS), and is highly scalable for different touch panel sizes. (180nm)
STAR2001 - Capacitive touch panel controller IP for mobile screens
A touch panel controller ASIC for smart phone and tablet sized projective-capacitive touch screens (PCTS). (180nm)
STAR2010 - PZT 3-axis MEMS gyro interface
An ASIC interface for a 3-axis PZT MEMS gyroscope using a 1.8/3.3V process .(180nm)
STAR2011 - Battery monitoring Gas Gauge
An ultra-low power Battery Management Unit (BMU) designed to provide voltage and charge monitoring of a battery. (180nm)
STAR2020 - Digital temperature sensor
A Delta- Sigma modulator based architecture to enable a flexible resolution for the resultant digital output with accuracy of <±2 degrees Celsius. (180nm)
STAR2021 - Low-voltage digital temperature sensor
A self-contained IP using a SAR based architecture and built-in low-jitter ring oscillator for fast acquisition and low-power when not in use. (65nm)
STAR2030 - Digital FM IR Receiver + Speaker driver
FM IR receiver with stereo PDM H-bridge headphone drivers. The FM demodulator supports 4 stereo audio channels between 2.3 and 5.7MHz (180nm)
STAR2040 - Cascoded GaN high voltage driver
A CMOS cascode driver circuit designed for use with high-current GaN (or SiC) power FET devices. It can be operated with 20 A of current, with a typical on-resistance of <15 milli-Ohms. (180nm)
IP Deliverables
.gds layout database
.lib liberty timing models
.lef layout exchange format files
Extensive documentation
Customer support/integration package
Design usage training
Schematics available
Secured online portal